INFLUENCE OF PLASMA EXCITATION-FREQUENCY FOR ALPHA-SI-H THIN-FILM DEPOSITION

被引：127

作者：

CURTINS, H

WYRSCH, N

FAVRE, M

SHAH, AV

机构：

来源：

PLASMA CHEMISTRY AND PLASMA PROCESSING | 1987年 / 7卷 / 03期

关键词：

D O I：

10.1007/BF01016517

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

引用

收藏

页码：267 / 273

页数：7

相关论文

共 20 条

[1] ACTIVATED REACTIVE EVAPORATION OF HYDROGENATED AMORPHOUS-SILICON
ANDERSON, JC
BISWAS, S
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 817 - 820
[2] A STUDY OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY HOT-WALL GLOW-DISCHARGE
BOULITROP, F
PROUST, N
MAGARINO, J
CRITON, E
PERAY, JF
DUPRE, M
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3494 - 3498
[3] HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON - EFFECT OF PLASMA EXCITATION-FREQUENCY
CURTINS, H
WYRSCH, N
SHAH, AV
[J]. ELECTRONICS LETTERS, 1987, 23 (05) : 228 - 230
[4] HIGH-RATE PHOTOCHEMICAL DEPOSITION OF AMORPHOUS-SILICON FROM HIGHER SILANES
DELAHOY, AE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 833 - 836
[5] FREQUENCY-EFFECTS IN PLASMA-ETCHING
FLAMM, DL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 729 - 738
[6] HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON FROM A SIH4 PLASMA
HAMASAKI, T
UEDA, M
CHAYAHARA, A
HIROSE, M
OSAKA, Y
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 600 - 602
[7] THE EFFECTS OF LINEAR STRAIN ON THE ELECTRONIC-PROPERTIES OF GLOW-DISCHARGE AMORPHOUS-SILICON
HEINTZE, M
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 495 - 498
[8] HEINTZE M, 1986, THESIS U DUNDEE
[9] ITOH H, 1984, 1 INT PHOT SCI ENG C, P119
[10] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562