HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON - EFFECT OF PLASMA EXCITATION-FREQUENCY

被引：106

作者：

CURTINS, H

WYRSCH, N

SHAH, AV

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 05期

关键词：

D O I：

10.1049/el:19870160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：228 / 230

页数：3

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