HIGH-RATE DEPOSITION OF A-SI-H USING ELECTRON-CYCLOTRON RESONANCE PLASMA

[1] HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON FROM A SIH4 PLASMA [J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 600 - 602

[2] EFFECTS OF INERT-GAS DILUTION OF SILANE ON PLASMA-DEPOSITED A-SI-H FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 331 - 333

[3] MCKENZIE DR, 1984, J APPL PHYS, V56, P2356, DOI 10.1063/1.334274

[4] THE EFFECTS OF DEPOSITION PARAMETERS ON A-SI-H FILMS FABRICATED BY MICROWAVE GLOW-DISCHARGE TECHNIQUES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 727 - 730

[5] PREPARATIONS OF A-SI-H FROM HIGHER SILANES (SINH2N+2) WITH THE HIGH GROWTH-RATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L639 - L642

[6] GLOW-DISCHARGE PREPARATION OF AMORPHOUS HYDROGENATED SILICON FROM HIGHER SILANES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 725 - 727

[7] A STUDY OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY RF GLOW-DISCHARGE IN SILANE-HYDROGEN MIXTURES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1812 - 1820

[1] HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON FROM A SIH4 PLASMA [J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 600 - 602

[2] EFFECTS OF INERT-GAS DILUTION OF SILANE ON PLASMA-DEPOSITED A-SI-H FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 331 - 333

[3] MCKENZIE DR, 1984, J APPL PHYS, V56, P2356, DOI 10.1063/1.334274

[4] THE EFFECTS OF DEPOSITION PARAMETERS ON A-SI-H FILMS FABRICATED BY MICROWAVE GLOW-DISCHARGE TECHNIQUES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 727 - 730

[5] PREPARATIONS OF A-SI-H FROM HIGHER SILANES (SINH2N+2) WITH THE HIGH GROWTH-RATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L639 - L642

[6] GLOW-DISCHARGE PREPARATION OF AMORPHOUS HYDROGENATED SILICON FROM HIGHER SILANES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 725 - 727

[7] A STUDY OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY RF GLOW-DISCHARGE IN SILANE-HYDROGEN MIXTURES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1812 - 1820