PREPARATIONS OF A-SI-H FROM HIGHER SILANES (SINH2N+2) WITH THE HIGH GROWTH-RATE

被引：34

作者：

OGAWA, K

SHIMIZU, I

INOUE, E

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 09期

关键词：

D O I：

10.1143/JJAP.20.L639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L639 / L642

页数：4

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