HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON FROM A SIH4 PLASMA

被引：49

作者：

HAMASAKI, T

UEDA, M

CHAYAHARA, A

HIROSE, M

OSAKA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 06期

关键词：

D O I：

10.1063/1.94841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：600 / 602

页数：3

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