RF SPUTTERING VOLTAGE DIVISION BETWEEN 2 ELECTRODES

[1] ACTON JR, 1963, COLD CATHODE DISCHAR, P86

[2] SPUTTERING OF DIELECTRICS BY HIGH-FREQUENCY FIELDS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) : 2991 - &

[3] BRUCE RH, 1981, SOLID STATE TECHNOL, V24, P64

[4] BRUCE RH, 1980, SEP INT C MICR AMST

[5] Chapman B., 1980, GLOW DISCHARGE PROCE

[6] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 4965 - 4971

[7] TEXTURED THIN-FILM SI SOLAR SELECTIVE ABSORBERS USING REACTIVE ION ETCHING [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 653 - 655

[8] DAVIDSE PD, 1966, SEMICOND PROD SOLID, V9, P30

[9] ION ENERGIES AT CATHODE OF A GLOW DISCHARGE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 219 - &

[10] REACTIVE ION ETCHING FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1315 - 1319

[1] ACTON JR, 1963, COLD CATHODE DISCHAR, P86

[2] SPUTTERING OF DIELECTRICS BY HIGH-FREQUENCY FIELDS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) : 2991 - &

[3] BRUCE RH, 1981, SOLID STATE TECHNOL, V24, P64

[4] BRUCE RH, 1980, SEP INT C MICR AMST

[5] Chapman B., 1980, GLOW DISCHARGE PROCE

[6] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 4965 - 4971

[7] TEXTURED THIN-FILM SI SOLAR SELECTIVE ABSORBERS USING REACTIVE ION ETCHING [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 653 - 655

[8] DAVIDSE PD, 1966, SEMICOND PROD SOLID, V9, P30

[9] ION ENERGIES AT CATHODE OF A GLOW DISCHARGE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 219 - &

[10] REACTIVE ION ETCHING FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1315 - 1319