RF SPUTTERING VOLTAGE DIVISION BETWEEN 2 ELECTRODES

[11] EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) : 415 - 428

[12] HAAS G, 1972, AM I PHYSICS HDB

[13] REACTIVE SPUTTER ETCHING OF SI, SIO2, CR, AL, AND OTHER MATERIALS WITH GAS-MIXTURES BASED ON CF4 AND CL2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1408 - 1411

[14] HORWITZ CP, UNPUB

[15] HOSOKAWA N, 1974, 6TH P INT VAC C

[16] Hosokawa N, 1974, JPN J APPL PHYS S, V13, P435

[17] RE-EMISSION COEFFICIENTS OF SI AND SIO2 FILMS DEPOSITED THROUGH RF AND DC SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4656 - &

[18] ELECTRICAL-PROPERTIES OF RF SPUTTERING SYSTEMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 3 - 15

[19] APPLICATION OF RF DISCHARGES TO SPUTTERING [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 168 - &

[20] ROLE OF DC SELF-BIAS POTENTIAL IN CONTROL OF RF SPUTTERING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 47 - 51

[11] EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) : 415 - 428

[12] HAAS G, 1972, AM I PHYSICS HDB

[13] REACTIVE SPUTTER ETCHING OF SI, SIO2, CR, AL, AND OTHER MATERIALS WITH GAS-MIXTURES BASED ON CF4 AND CL2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1408 - 1411

[14] HORWITZ CP, UNPUB

[15] HOSOKAWA N, 1974, 6TH P INT VAC C

[16] Hosokawa N, 1974, JPN J APPL PHYS S, V13, P435

[17] RE-EMISSION COEFFICIENTS OF SI AND SIO2 FILMS DEPOSITED THROUGH RF AND DC SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4656 - &

[18] ELECTRICAL-PROPERTIES OF RF SPUTTERING SYSTEMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 3 - 15

[19] APPLICATION OF RF DISCHARGES TO SPUTTERING [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 168 - &

[20] ROLE OF DC SELF-BIAS POTENTIAL IN CONTROL OF RF SPUTTERING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 47 - 51