REACTIVE SPUTTER ETCHING OF SI, SIO2, CR, AL, AND OTHER MATERIALS WITH GAS-MIXTURES BASED ON CF4 AND CL2

被引：18

作者：

HORWITZ, CM

MELNGALLIS, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1408 / 1411

页数：4

共 12 条

[1]

CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P156

[2] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J].

COBURN, JW ;

KAY, E .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) :33-41

[3] EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA [J].

EPHRATH, LM .

JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) :415-428

[4] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J].

EPHRATH, LM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1419-1421

[5] SIMPLE CALIBRATED GAS FEED SYSTEM [J].

HORWITZ, CM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1979, 50 (05) :652-654

[6]

Hosokawa N, 1974, JPN J APPL PHYS S, V13, P435

[7] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J].

LEHMANN, HW ;

WIDMER, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :319-326

[8] REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS IN AN RF PLASMA CONTAINING HALOGEN SPECIES [J].

SCHAIBLE, PM ;

METZGER, WC ;

ANDERSON, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :334-337

[9]

SCHWARTZ GC, 1980, SOLID STATE TECHNOL, V23, P85

[10] COMPETITIVE MECHANISMS IN REACTIVE ION ETCHING IN A CF4 PLASMA [J].

SCHWARTZ, GC ;

ROTHMAN, LB ;

SCHOPEN, TJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) :464-469

← 1 2 →