Polymer memory device based on conjugated polymer and gold nanoparticles

被引:165
作者
Prakash, Ankita
Ouyang, Jianyong
Lin, Jen-Lien
Yang, Yang [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] Ind Technol Res Inst, Union Chem Labs, Hsinchu 300, Taiwan
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2337252
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrical bistability is demonstrated in a polymer memory device with an active layer consisting of conjugated poly(3-hexylthiophene) and gold nanoparticles capped with 1-dodecanethiol sandwiched between two metal electrodes. The device was fabricated through a simple solution processing technique and exhibited a remarkable electrical bistable behavior. Above a threshold voltage the pristine device, which was in a low conductivity state, exhibited an increase in conductivity by more than three orders of magnitude. The device could be returned to the low conductivity state by applying a voltage in the reverse direction. The electronic transition is attributed to an electric-field-induced charge transfer between the two components in the system. The conduction mechanism changed from a charge-injection-controlled current in the low conductivity state to a charge-transport-controlled current in the high conductivity state. In the high conductivity state the conduction was dominated by a field-enhanced thermal excitation of trapped charges at room temperature, while it is dominated by charge tunneling at low temperatures. The device exhibited excellent stability in both the conductivity states and could be cycled between the two states for numerous times. The device exhibits tremendous potential for its application as fast, stable, low-cost, high storage density nonvolatile electronic memory. (c) 2006 American Institute of Physics.
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页数:5
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