High-performance double-recessed InAlAs/InGaAs power metamorphic HEMT on GaAs substrate

被引：23

作者：

Tu, DW ^{[1
]}

Wang, SJ ^{[1
]}

Liu, JSM ^{[1
]}

Hwang, KC ^{[1
]}

Kong, W ^{[1
]}

Chao, PC ^{[1
]}

Nichols, K ^{[1
]}

机构：

[1] Sanders, Nashua, NH 03061 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 11期

关键词：

metamorphic high electron mobility transistor; MHEMT; power MHEMT;

D O I：

10.1109/75.808035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Double-recess power metamorphic high electron mobility transistors (MHEMT's) on GaAs substrates were successfully demonstrated. The In(.53)A(.47)As/In(.65)Al(.35)AS structures exhibited extrinsic transconductance of 1050 mS/mm and breakdown of 8.3 V, which are comparable to that of the InP power HEMT, Excellent maximum power added efficiency (PAE) of 60.2% with output power of 0.45 W/mm and record associated power gain of 17.1 dB were realized at 20 GHz, A maximum output power of 0.51 W/mm has also been demonstrated,vith the device, This is the first demonstration of high-efficiency K-band power MHEMT's.

引用

页码：458 / 460

页数：3

共 5 条

[1] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].