InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage

被引：75

作者：

Zaknoune, M ^{[1
]}

Bonte, B ^{[1
]}

Gaquiere, C ^{[1
]}

Cordier, Y ^{[1
]}

Druelle, Y ^{[1
]}

Theron, D ^{[1
]}

Crosnier, Y ^{[1
]}

机构：

[1] UMR CNRS 9929, Inst Elect & Microelect Nord, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 09期

关键词：

D O I：

10.1109/55.709638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An In0.3Al0.7As/In0.3Ga0.7As metamorphic power high electron mobility transistor (HEMT) grown on GaAs has been developed, This structure with 30% indium content presents several advantages over P-HEMT on GaAs and LM-HEMT on InP. A 0.15-mu m gate length device with a single delta doping exhibits a state-of-the-art current gain cut-off frequency F-t value of 125 GHz at V-ds = 1.5 V, an extrinsic transconductance of 650 mS/mm and a current density of 750 mA/mm associated to a high breakdown voltage of -13 V, Power measurements performed at 60 GHz demonstrate a maximum output power of 240 mW/mm with 6.4-dB power gain and a power added efficiency (PAE) of 25%. These are the first power results ever reported for any metamorphic HEMT.

引用

页码：345 / 347

页数：3

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