MICROWAVE PERFORMANCE OF 0.4-MU-M GATE METAMORPHIC IN0.29AL0.71AS IN0.3GA0.7AS HEMT ON GAAS SUBSTRATE

被引：25

作者：

WIN, P ^{[1
]}

DRUELLE, Y ^{[1
]}

LEGRY, P ^{[1
]}

LEPILLIET, S ^{[1
]}

CAPPY, A ^{[1
]}

CORDIER, Y ^{[1
]}

FAVRE, J ^{[1
]}

机构：

[1] THOMSON LCR,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 02期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930114

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MBE grown metamorphic In0.29Al0.71As/In0.3Ga0.7As/GaAs high electron mobility transistors have been successfully fabricated. A 0.4 mum triangular gate device showed transconductance as high as 700 mS/mm at a current density of 230 mA/mm. The measured f(T) was 45 GHz and f(max) was 115 GHz. These high values are, to the author's knowledge, the first reported for submicrometre metamorphic InAlAs/InGaAs/GaAs HEMTs with an indium content of 30%.

引用

页码：169 / 170

页数：2

共 4 条

[1] METAMORPHIC INYGA1-YAS/INZAL1-ZAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS GROWN ON GAAS (001) SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].