METAMORPHIC IN0.3GA0.7AS/IN0.29AL0.71AS LAYER ON GAAS - A NEW STRUCTURE FOR HIGH-PERFORMANCE HIGH ELECTRON-MOBILITY TRANSISTOR REALIZATION

被引：32

作者：

WIN, P

DRUELLE, Y

CAPPY, A

CORDIER, Y

FAVRE, J

BOUILLET, C

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

[2] UNIV LILLE 1,STRUCT & PROPRIETES ETAT SOLIDE LAB,F-59655 VILLENEUVE DASCQ,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.107729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new high electron mobility transistor (HEMT) using InAlAs/InGaAs grown on GaAs has been successfully realized. This structure, with an In content close to 30%, presents several advantages over conventional pseudomorphic HEMT on GaAs and lattice matched HEMT on InP. To accommodate the mismatch between the active layer and the GaAs substrate, a metamorphic buffer has been grown. High electron mobility with high two-dimensional electron gas density (20 700 cm2/V s with 4 X 10(12) cm-2) and high Schottky barrier quality (V(b) = 0.68 V with eta = 1.1) have been obtained. A 3-mu-m gate length device has shown intrinsic transeonductance as high as 530 mS/mm.

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页码：922 / 924

页数：3

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