94-GHZ 0.1-MU-M T-GATE LOW-NOISE PSEUDOMORPHIC INGAAS HEMTS

被引：55

作者：

TAN, KL

DIA, RM

STREIT, DC

LIN, TY

TRINH, TQ

HAN, AC

LIU, PH

CHOW, PMD

YEN, HC

机构：

[1] TRW Electronics and Technology Division, Re-dondo Beach

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 12期

关键词：

D O I：

10.1109/55.63047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the successful fabrication of state-of-the-art W-band 0.1-μm T-gate pseudomorphic (PM) InGaAs high electron mobility transistors (HEMT's). This device achieved a noise figure of 2.1 dB with an associated gain of 6.3 dB at 93.5 GHz. The device has a maximum gain of 9.6 dB at 94 GHz, which extrapolates to an Fmax of 290 GHz. This noise figure is the lowest ever reported for HEMT's fabricated on GaAs substrates at this frequency range. © 1990 IEEE

引用

页码：585 / 587

页数：3

共 8 条

[1]

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[6]

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[7]

NELSON B, 1990, UNPUB GAAS IC S

[8] ULTRALOW-NOISE W-BAND PSEUDOMORPHIC INGAAS HEMTS [J].

TAN, KL ;

DIA, RM ;

STREIT, DC ;

HAN, AC ;

TRINH, TQ ;

VELEBIR, JR ;

LIU, PH ;

LIN, TS ;

YEN, HC ;

SHOLLEY, M ;

SHAW, L .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (07) :303-305

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