94-GHZ 0.1-MU-M T-GATE LOW-NOISE PSEUDOMORPHIC INGAAS HEMTS

被引:55
作者
TAN, KL
DIA, RM
STREIT, DC
LIN, TY
TRINH, TQ
HAN, AC
LIU, PH
CHOW, PMD
YEN, HC
机构
[1] TRW Electronics and Technology Division, Re-dondo Beach
关键词
D O I
10.1109/55.63047
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the successful fabrication of state-of-the-art W-band 0.1-μm T-gate pseudomorphic (PM) InGaAs high electron mobility transistors (HEMT's). This device achieved a noise figure of 2.1 dB with an associated gain of 6.3 dB at 93.5 GHz. The device has a maximum gain of 9.6 dB at 94 GHz, which extrapolates to an Fmax of 290 GHz. This noise figure is the lowest ever reported for HEMT's fabricated on GaAs substrates at this frequency range. © 1990 IEEE
引用
收藏
页码:585 / 587
页数:3
相关论文
共 8 条
[1]  
AUST M, 1989, GAAS IC SYMPOSIUM /, P95
[2]   DC AND MICROWAVE CHARACTERISTICS OF SUB-0.1-MU-M GATE-LENGTH PLANAR-DOPED PSEUDOMORPHIC HEMTS [J].
CHAO, PC ;
SHUR, MS ;
TIBERIO, RC ;
DUH, KHG ;
SMITH, PM ;
BALLINGALL, JM ;
HO, P ;
JABRA, AA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) :461-473
[3]   94 GHZ LOW-NOISE HEMT [J].
CHAO, PC ;
DUH, KHG ;
HO, P ;
SMITH, PM ;
BALLINGALL, JM ;
JABRA, AA ;
TIBERIO, RC .
ELECTRONICS LETTERS, 1989, 25 (08) :504-505
[4]  
DUH KHG, 1990, IEEE MTT S DIG, P595
[5]   OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS [J].
FUKUI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1032-1037
[6]  
Lee R. E., 1989, IEEE 1989 MTT-S International Microwave Symposium Digest (Cat. No.89CH2725-0), P975, DOI 10.1109/MWSYM.1989.38885
[7]  
NELSON B, 1990, UNPUB GAAS IC S
[8]   ULTRALOW-NOISE W-BAND PSEUDOMORPHIC INGAAS HEMTS [J].
TAN, KL ;
DIA, RM ;
STREIT, DC ;
HAN, AC ;
TRINH, TQ ;
VELEBIR, JR ;
LIU, PH ;
LIN, TS ;
YEN, HC ;
SHOLLEY, M ;
SHAW, L .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (07) :303-305