ULTRALOW-NOISE W-BAND PSEUDOMORPHIC INGAAS HEMTS

被引：20

作者：

TAN, KL

DIA, RM

STREIT, DC

HAN, AC

TRINH, TQ

VELEBIR, JR

LIU, PH

LIN, TS

YEN, HC

SHOLLEY, M

SHAW, L

机构：

[1] Electronics and Technology Division, TRW, Redondo Beach

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 07期

关键词：

Semiconducting Indium Compounds--Applications - Transistors; Field Effect--Noise;

D O I：

10.1109/55.56482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully fabricated state-of-the-art low-noise planar doped pseudomorphic (PM) InGaAs high electron mobility transistors (HEMT's) with a gate length of 0.1 μm for W-band operation. These devices feature a multiple-finger layout with air bridges interconnecting the sources to reduce gate resistance. The device exhibits a minimum noise figure of 2.5 dB with an associated gain of 4.7 dB at 92.5 GHz. This result is the best reported for any transistor fabricated on GaAs substrates at this frequency. © 1990 IEEE

引用

页码：303 / 305

页数：3

共 9 条

[1]

AUST M, 1989, GAAS IC SYMPOSIUM /, P95

[2] W-BAND LOW-NOISE INALAS INGAAS LATTICE-MATCHED HEMTS [J].