ELECTRON-TRANSPORT PROPERTIES OF STRAINED INXGA1-XAS

被引：61

作者：

THOBEL, JL

BAUDRY, L

CAPPY, A

BOUREL, P

FAUQUEMBERGUE, R

机构：

[1] Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Université des Sciences et Techniques de Lille Flandre Artois

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.102780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

As a first approach to the study of strained pseudomorphic materials, we have used a Monte Carlo method to calculate the effect of strain on electron transport properties of bulk InGaAs. Strain-induced velocity reduction is found to be much more pronounced for InGaAs grown on GaAs substrate than for InGaAs grown on InP substrate.

引用

页码：346 / 348

页数：3

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