LOW-FIELD AND HIGH-FIELD TRANSPORT-PROPERTIES OF PSEUDOMORPHIC INXGA1-XAS IN0.52AL0.48AS (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.65) MODULATION-DOPED HETEROSTRUCTURES

被引：66

作者：

HONG, WP

NG, GI

BHATTACHARYA, PK

PAVLIDIS, D

WILLING, S

DAS, B

机构：

[1] UNIV MICHIGAN,CTR HIGH FREQUENCY MICROELECTR,ANN ARBOR,MI 48109

[2] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

[3] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

关键词：

D O I：

10.1063/1.341748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1945 / 1949

页数：5

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