CHARACTERISTICS OF STRAINED IN0.65GA0.35AS/IN0.52AL0.48AS HEMT WITH OPTIMIZED TRANSPORT PARAMETERS

被引：32

作者：

NG, GI

HONG, WP

PAVLIDIS, D

TUTT, M

BHATTACHARYA, PK

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 09期

关键词：

D O I：

10.1109/55.6938

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：439 / 441

页数：3

共 10 条

[1]

CHAN YJ, 1987, IEDM, P427

[2]

HIROSE K, 1985, I PHYS C SER, V79, P529

[3]

HIROSE K, 1985, 12TH INT S GAAS REL

[4]

HONG WP, 1987, IEEE T ELECTRON DEV, V34, P1491, DOI 10.1109/T-ED.1987.23110

[5]

HONG WP, 1988, IN PRESS J APPL AUG

[6]

Jaffe M. D., 1987, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.87CH2526-2), P70

[7]

Kuo J. M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P460

[8] HIGH-PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMTS [J].

MISHRA, UK ;

BROWN, AS ;

JELLOIAN, LM ;

HACKETT, LH ;

DELANEY, MJ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :41-43

[9]

PARISOT M, 1984, 1984 P IEEE MICR MIL, P91

[10]

WALLIS RH, 1985, I PHYS C BIARRITZ, V74, P287

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