BAND-STRUCTURE AND CHARGE CONTROL STUDIES OF N-TYPE AND P-TYPE PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：57

作者：

JAFFE, M

SINGH, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 01期

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D O I：

10.1063/1.342545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：329 / 338

页数：10

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