VERY HIGH POWER-ADDED EFFICIENCY AND LOW-NOISE 0.15-MICRO-M GATE-LENGTH PSEUDOMORPHIC HEMTS

被引：46

作者：

KAO, MY

SMITH, PM

HO, P

CHAO, PC

DUH, KHG

JABRA, AA

BALLINGALL, JM

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 12期

关键词：

D O I：

10.1109/55.43146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：580 / 582

页数：3

共 7 条

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SMITH, PM ;

PALMATEER, SC ;

HWANG, JCM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1042-1046

[2]

DUH KHG, 1988, IEEE MTT S, P923

[3]

Kim B., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P168, DOI 10.1109/IEDM.1988.32781

[4] GAAS POWER MESFET WITH 41-PERCENT POWER-ADDED EFFICIENCY AT 35 GHZ [J].

KIM, B ;

WURTELE, M ;

SHIH, HD ;

TSERNG, HQ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :57-58

[5] 0.2-MU-M GATE-LENGTH ATOMIC-PLANAR DOPED PSEUDOMORPHIC AL0.3GA0.7AS/IN0.25GA0.75AS MODFETS WITH FT OVER 120 GHZ [J].

NGUYEN, LD ;

RADULESCU, DC ;

TASKER, PJ ;

SCHAFF, WJ ;

EASTMAN, LF .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :374-376

[6] MONOLITHIC INTEGRATION OF PSEUDOMORPHIC POWER AND LOW-NOISE HEMTS [J].

SAUNIER, P ;

TSERNG, HQ ;

SHIH, HD ;

BRADSHAW, K .

ELECTRONICS LETTERS, 1989, 25 (09) :583-584

[7]

SMITH PM, 1988, IEEE MTT S, P927

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