0.2-MU-M GATE-LENGTH ATOMIC-PLANAR DOPED PSEUDOMORPHIC AL0.3GA0.7AS/IN0.25GA0.75AS MODFETS WITH FT OVER 120 GHZ

被引：41

作者：

NGUYEN, LD ^{[1
]}

RADULESCU, DC ^{[1
]}

TASKER, PJ ^{[1
]}

SCHAFF, WJ ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1109/55.748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：374 / 376

页数：3

共 12 条

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[8] A NEW LOW-NOISE ALGAAS/GAAS 2DEG FET WITH A SURFACE UNDOPED LAYER - COMMENTS
NGUYEN, LD
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SCHAFF, WJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1187 - 1187
[9] CHARGE CONTROL, DC, AND RF PERFORMANCE OF A 0.35-MU-M PSEUDOMORPHIC ALGAAS/INGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR
NGUYEN, LD
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[10] NGUYEN LD, 1987, UNPUB