CHARGE CONTROL, DC, AND RF PERFORMANCE OF A 0.35-MU-M PSEUDOMORPHIC ALGAAS/INGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR

被引：42

作者：

NGUYEN, LD ^{[1
]}

SCHAFF, WJ ^{[1
]}

TASKER, PJ ^{[1
]}

LEPORE, AN ^{[1
]}

PALMATEER, LF ^{[1
]}

FOISY, MC ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1109/16.2432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：139 / 144

页数：6

共 25 条

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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1238 - 1240
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