60 GHZ LOW-NOISE HIGH-ELECTRON-MOBILITY TRANSISTORS

[1] BERENZ JJ, 1985, MICROWAVES RF NOV, P121

[2] ELECTRON-BEAM FABRICATION OF GAAS LOW-NOISE MESFETS USING A NEW TRILAYER RESIST TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1042 - 1046

[3] CHAO PC, 1985, IEEE ELECTRON DEVICE, V6, P31

[4] A HIGH ASPECT RATIO DESIGN APPROACH TO MILLIMETER-WAVE HEMT STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 11 - 17

[5] KAMEI K, 1985, C GALLIUM ARSENIDE R

[6] MICROWAVE PERFORMANCE OF 0.25-MU-M GATE LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 142 - 145

[7] PALMATEER SC, 1984, 11TH INT S GAAS REL

[8] NOISE PARAMETERS AND LIGHT SENSITIVITY OF LOW-NOISE HIGH-ELECTRON-MOBILITY TRANSISTORS AT 300-K AND 12.5-K [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 218 - 223

[9] SHOLLEY M, 1985, JUN IEEE MTT S INT M, P555

[10] NOISE-FIGURE CHARACTERISTICS OF 1/2-MU-M GATE SINGLE-HETEROJUNCTION HIGH-ELECTRON-MOBILITY FETS AT 35 GHZ [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 179 - 181

[1] BERENZ JJ, 1985, MICROWAVES RF NOV, P121

[2] ELECTRON-BEAM FABRICATION OF GAAS LOW-NOISE MESFETS USING A NEW TRILAYER RESIST TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1042 - 1046

[3] CHAO PC, 1985, IEEE ELECTRON DEVICE, V6, P31

[4] A HIGH ASPECT RATIO DESIGN APPROACH TO MILLIMETER-WAVE HEMT STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 11 - 17

[5] KAMEI K, 1985, C GALLIUM ARSENIDE R

[6] MICROWAVE PERFORMANCE OF 0.25-MU-M GATE LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 142 - 145

[7] PALMATEER SC, 1984, 11TH INT S GAAS REL

[8] NOISE PARAMETERS AND LIGHT SENSITIVITY OF LOW-NOISE HIGH-ELECTRON-MOBILITY TRANSISTORS AT 300-K AND 12.5-K [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 218 - 223

[9] SHOLLEY M, 1985, JUN IEEE MTT S INT M, P555

[10] NOISE-FIGURE CHARACTERISTICS OF 1/2-MU-M GATE SINGLE-HETEROJUNCTION HIGH-ELECTRON-MOBILITY FETS AT 35 GHZ [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 179 - 181