NOISE PARAMETERS AND LIGHT SENSITIVITY OF LOW-NOISE HIGH-ELECTRON-MOBILITY TRANSISTORS AT 300-K AND 12.5-K

被引：30

作者：

POSPIESZALSKI, MW

WEINREB, S

CHAO, PC

MISHRA, UK

PALMATEER, SC

SMITH, PM

HWANG, JCM

机构：

[1] GE,ADV MAT & DEVICES GRP,SYRACUSE,NY 13221

[2] GE,ELECTR LAB,SYRACUSE,NY 13221

[3] GE,ADV MAT & DEVICES LAB,SYRACUSE,NY 13221

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 02期

关键词：

D O I：

10.1109/T-ED.1986.22469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：218 / 223

页数：6

共 15 条

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[8] ON THE COLLAPSE OF DRAIN I-V-CHARACTERISTICS IN MODULATION-DOPED FETS AT CRYOGENIC TEMPERATURES [J].

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[10] MICROWAVE PERFORMANCE OF 0.25-MU-M GATE LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS [J].

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