IN0.30AL0.70AS/IN0.30GA0.70AS QUASI-INSULATING GATE STRAINED-LAYER FIELD-EFFECT TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引:8
作者
CHU, P
LIN, CL
WIEDER, HH
机构
关键词
D O I
10.1016/0040-6090(88)90376-8
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:155 / 162
页数:8
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