ELECTRICAL-PROPERTIES AND APPLICATIONS OF INXAL1-XAS/INP

被引：6

作者：

HANSON, CM

WIEDER, HH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：971 / 975

页数：5

共 24 条

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[8] X-BAND SELF-ALIGNED GATE ENHANCEMENT-MODE INP MISFETS [J].

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[9]

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