A COMPREHENSIVE ANALYTICAL MODEL FOR III-V COMPOUND MISFETS

被引：8

作者：

HILL, PM

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1985.22266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2249 / 2256

页数：8

共 12 条

[1]

BENNETT HS, 1978, IEEE CIRCUITS DEVICE, P35

[2]

BUOT FA, 1983, SOLID STATE ELECTRON, V26, P617, DOI 10.1016/0038-1101(83)90016-3

CURTICE, WR .

[4] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J].

FUKUI, H .

BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03) :771-797

[5]

GALIO J, 1980, IEEE T ELECTRON DEVI, V27, P1256

[6] INTERFACIAL CONSTRAINTS ON DEVICE PERFORMANCE [J].

LILE, DL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :496-503

LILE, DL .

[8]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[9]

Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6

[10] ACCURATE MODEL FOR A DEPLETION MODE IGFET USED AS A LOAD DEVICE [J].

RAO, GRM .