ACCURATE MODEL FOR A DEPLETION MODE IGFET USED AS A LOAD DEVICE

被引：16

作者：

RAO, GRM

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(78)90002-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：711 / 714

页数：4

共 16 条

[1]

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[2]

DOUGLAS EC, 1974, IEEE T ELECTRON DEV, VED21, P324, DOI 10.1109/T-ED.1974.17924

[3] DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION [J].

EDWARDS, JR ;

MARR, G .

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :295-+

[5]

GROVE AS, 1967, PHYSICS TECHNOLOGY S, P322

[6] MODELING OF AN ION-IMPLANTED SILICON-GATE DEPLETION-MODE IGFET [J].

HUANG, JST ;

TAYLOR, GW .

[7]

LIN HC, 1976, IEEE J SOLID-ST CIRC, V11, P443

[8]

LOFTHUS A, 1976, ELECTRONICS 0527

[9]

RAO GRM, 1971, THESIS SO METHODIST, P76

[10]

SCHLAGETER JM, 1967, ISSCC DIGEST TECHNIC, V19, P136