ULTRA-HIGH-SPEED MODULATION-DOPED FIELD-EFFECT TRANSISTORS - A TUTORIAL REVIEW

被引：111

作者：

NGUYEN, LD ^{[1
]}

LARSON, LE ^{[1
]}

MISHRA, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,SANTA BARBARA,CA 93106

来源：

PROCEEDINGS OF THE IEEE | 1992年 / 80卷 / 04期

关键词：

D O I：

10.1109/5.135374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is a tutorial review on the Modulation-Doped Field-Effect Transistor (MODFET) and its application to ultra-low-noise, medium-power, and ultra-wide-band traveling-wave amplifiers, as well as ultra-high-speed digital logic circuits. We believe that, with further advances in material growth and device scaling, significant improvements in cutoff frequencies, switching speed, noise, and power will be achieved in the near future.

引用

页码：494 / 518

页数：25

共 101 条

[1] THE INTRINSIC NOISE-FIGURE OF THE MESFET DISTRIBUTED-AMPLIFIER [J].