THE INTRINSIC NOISE-FIGURE OF THE MESFET DISTRIBUTED-AMPLIFIER

被引：96

作者：

AITCHISON, CS ^{[1
]}

机构：

[1] UNIV LONDON CHELSEA COLL,DEPT ELECTR,LONDON SW3 6LX,ENGLAND

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1985年 / 33卷 / 06期

关键词：

D O I：

10.1109/TMTT.1985.1133100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：460 / 466

页数：7

共 10 条

[1]

BREWITTTAYLOR CR, 1980, P I ELEC ENG 1, V127, P1

[2]

Friis H, 1944, P IRE JUL, P419

[3] DISTRIBUTED AMPLIFICATION [J].

GINZTON, EL ;

HEWLETT, WR ;

JASBERG, JH ;

NOE, JD .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1948, 36 (08) :956-969

[4] ON THEORY AND PERFORMANCE OF SOLID-STATE MICROWAVE DISTRIBUTED-AMPLIFIERS [J].

NICLAS, KB ;

WILSER, WT ;

KRITZER, TR ;

PEREIRA, RR .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (06) :447-456

[5] ON NOISE IN DISTRIBUTED-AMPLIFIERS AT MICROWAVE-FREQUENCIES [J].

NICLAS, KB ;

TUCKER, BA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (08) :661-668

[6]

Percival W. S., 1936, British Patent Specification No, Patent No. [460,562, 460562]

[7] A DC-12 GHZ MONOLITHIC GAASFET DISTRIBUTED-AMPLIFIER [J].

STRID, EW ;

GLEASON, KR .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :969-975

[8] GATE NOISE IN FIELD EFFECT TRANSISTORS AT MODERATELY HIGH FREQUENCIES [J].

VANDERZIEL, A .

PROCEEDINGS OF THE IEEE, 1963, 51 (03) :461-&

[9]

VANDERZIEL A, 1962, P IRE, V50, P1808

[10]

1952, P IRE, V40, P1681

← 1 →