A 0.1-MU-M GATE AL0.5IN0.5AS GA0.5IN0.5AS MODFET FABRICATED ON GAAS SUBSTRATES

被引：61

作者：

WANG, GW

CHEN, YK

SCHAFF, WJ

EASTMAN, LF

机构：

[1] NATL NANOFABRICAT FACIL,ITHACA,NY

[2] RAYTHEON CO,SPECIAL MICROWAVE DEVICE OPERAT,NORTHBOROUGH,MA

[3] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[4] GE,ELECTR LAB,SCHENECTADY,NY 12345

[5] GE,CTR DISCRETE SEMICOND DEVICE,SYRACUSE,NY 13201

来源：

关键词：

D O I：

10.1109/16.3331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：818 / 823

页数：6

共 24 条

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