SI DIFFUSION IN GAINAS-AIINAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES

[1] THE BEHAVIOR OF UNINTENTIONAL IMPURITIES IN GA0.47IN0.53AS GROWN BY MBE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (03) : 367 - 378

[2] SILICON DOPING AND IMPURITY PROFILES IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4411 - 4415

[3] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292

[4] GRIEM TH, 1985, THESIS CORNELL U

[5] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[6] HIROSE K, 1985, I PHYS C SER, V79

[7] INOUE K, 1985, APPL PHYS LETT, V46, P73

[8] ITOH T, UNPUB 1985 P IEEE CO

[9] SCHAFF WJ, 1985, MATER RES SOC S P, V37, P15

[10] INGAAS JUNCTION FETS WITH FREQUENCY LIMIT (MAG = 1) ABOVE 30 GHZ [J]. ELECTRONICS LETTERS, 1985, 21 (10) : 449 - 451

[1] THE BEHAVIOR OF UNINTENTIONAL IMPURITIES IN GA0.47IN0.53AS GROWN BY MBE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (03) : 367 - 378

[2] SILICON DOPING AND IMPURITY PROFILES IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4411 - 4415

[3] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292

[4] GRIEM TH, 1985, THESIS CORNELL U

[5] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[6] HIROSE K, 1985, I PHYS C SER, V79

[7] INOUE K, 1985, APPL PHYS LETT, V46, P73

[8] ITOH T, UNPUB 1985 P IEEE CO

[9] SCHAFF WJ, 1985, MATER RES SOC S P, V37, P15

[10] INGAAS JUNCTION FETS WITH FREQUENCY LIMIT (MAG = 1) ABOVE 30 GHZ [J]. ELECTRONICS LETTERS, 1985, 21 (10) : 449 - 451