Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature

被引：10

作者：

Huang, YC

Chern, GW

Lin, KH

Liang, JC

Sun, CK ^{[1
]}

Hsu, CC

Keller, S

DenBaars, SP

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Electro Opt Engn, Taipei 10617, Taiwan

[3] Natl Chung Cheng Univ, Dept Phys, Chiayi, Taiwan

[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 01期

关键词：

D O I：

10.1063/1.1491296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Femtosecond transient transmission pump-probe technique was used to investigate exciton dynamics in a nominally undoped GaN thin film at room temperature. An exciton ionization time of 100-250 femtoseconds was observed by the time-resolved pump-probe measurement. A comparison experiment with pre-excited free carriers also confirmed the observation of the exciton ionization process in bulk GaN. (C) 2002 American Institute of Physics.

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页码：85 / 87

页数：3

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