Crystal growth and liquid-phase epitaxy of gallium nitride

被引：19

作者：

Klemenz, C ^{[1
]}

Scheel, HJ ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Inst Micro & Optoelect, CH-1007 Lausanne, Switzerland

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 211卷 / 1-4期

关键词：

gallium nitride; liquid-phase epitaxy; substrates;

D O I：

10.1016/S0022-0248(99)00831-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

With the recognition of the importance of the structural perfection of GaN films for highest performance devices, the growth of GaN bulk crystals or thick GaN layers to he used as substrates as well as high-quality epitaxial layers is considered with increased interest. The different approaches are discussed. GaN films were grown by liquid-phase epitaxy (LPE) on (0 0 0 1)sapphire, on (0 0 1)LiGaO2, on (1 0 0)LiAlO2, and on vapor-grown GaN seed films from Ga(1) at 900 degrees C. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：62 / 67

页数：6

共 29 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[2] Growth of bulk AlN and GaN single crystals by sublimation [J].

Balkas, CM ;

Sitar, Z ;

Zheleva, T ;

Bergman, L ;

Shmagin, IK ;

Muth, JF ;

Kolbas, R ;

Nemanich, R ;

Davis, RF .

III-V NITRIDES, 1997, 449 :41-46

[3]

CHAI B, CRYSTAL PHOTONICS

[4]

Detchprohm T, 1996, INST PHYS CONF SER, V142, P859

[5] GROWTH AND MORPHOLOGY OF GAN [J].

EJDER, E .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (01) :44-46

[6] THIN-FILM GROWTH MODES, WETTING AND CLUSTER NUCLEATION [J].

GRABOW, MH ;

GILMER, GH .

SURFACE SCIENCE, 1988, 194 (03) :333-346

[7] ON THE RELATIONS BETWEEN STRUCTURE AND MORPHOLOGY OF CRYSTALS .1. [J].

HARTMAN, P ;

PERDOK, WG .

ACTA CRYSTALLOGRAPHICA, 1955, 8 (01) :49-52

[8]

Hellman ES, 1997, MRS INTERNET J N S R, V2, pU32

[9]

HOFFMANN DM, 1996, MATER RES SOC S P, V395, P619

[10] LiGaO2 single crystals for a substrate of hexagonal GaN thin films [J].

Ishii, T ;

Tazoh, Y ;

Miyazawa, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (2A) :L139-L141

← 1 2 3 →