LiGaO2 single crystals for a substrate of hexagonal GaN thin films

被引：26

作者：

Ishii, T

Tazoh, Y

Miyazawa, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 2A期

关键词：

LiGaO2; crystal growth; polarity inversion; substrate; GaN;

D O I：

10.1143/JJAP.36.L139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We succeeded in Czchoralski pulling of LiGaO2 single crystals and found for the first time unique domains that can be observed only by mechano-chemical polishing. The domains are separated by straight lines belonging to {110}. Since LiGaO2 single crystal is polar along the c-axis, the formation of a unique domain boundary is presumably attributable to the polarity inversion of the c-axis.

引用

页码：L139 / L141

页数：3

共 5 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].