Metalorganic chemical vapor deposition of monocrystalline GaN thin films on beta-LiGaO2 substrates

被引：67

作者：

Kung, P ^{[1
]}

Saxler, A ^{[1
]}

Zhang, X ^{[1
]}

Walker, D ^{[1
]}

Lavado, R ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] USAF,WRIGHT LAB,MATERIALS DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 14期

关键词：

D O I：

10.1063/1.116898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the metalorganic chemical vapor deposition growth and characterization of monocrystalline GaN thin films on beta-LiGaO2 substrates. The influence of the growth temperature on the crystal quality was studied. The structural, electrical, and optical properties of the films were assessed through scanning electron microscopy, x-ray diffraction, Hall measurements, optical transmission, photoluminescence. (C) 1996 American Institute of Physics.

引用

页码：2116 / 2118

页数：3

共 15 条

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