Metalorganic chemical vapor deposition of monocrystalline GaN thin films on beta-LiGaO2 substrates

被引：67

作者：

Kung, P ^{[1
]}

Saxler, A ^{[1
]}

Zhang, X ^{[1
]}

Walker, D ^{[1
]}

Lavado, R ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] USAF,WRIGHT LAB,MATERIALS DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 14期

关键词：

D O I：

10.1063/1.116898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the metalorganic chemical vapor deposition growth and characterization of monocrystalline GaN thin films on beta-LiGaO2 substrates. The influence of the growth temperature on the crystal quality was studied. The structural, electrical, and optical properties of the films were assessed through scanning electron microscopy, x-ray diffraction, Hall measurements, optical transmission, photoluminescence. (C) 1996 American Institute of Physics.

引用

页码：2116 / 2118

页数：3

共 15 条

[11] COMPARISON OF THE PHYSICAL-PROPERTIES OF GAN THIN-FILMS DEPOSITED ON (0001) AND (0112) SAPPHIRE SUBSTRATES
SUN, CJ
RAZEGHI, M
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (07) : 973 - 975
[12] AlGaN ultraviolet photoconductors grown on sapphire
Walker, D
Zhang, X
Kung, P
Saxler, A
Javadpour, S
Xu, J
Razeghi, M
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (15) : 2100 - 2101
[13] PHOTOVOLTAIC EFFECTS IN GAN STRUCTURES WITH P-N-JUNCTIONS
ZHANG, X
KUNG, P
WALKER, D
PIOTROWSKI, J
ROGALSKI, A
SAXLER, A
RAZEGHI, M
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (14) : 2028 - 2030
[14] GROWTH OF ALXGA1-XN-GE ON SAPPHIRE AND SILICON SUBSTRATES
ZHANG, X
KUNG, P
SAXLER, A
WALKER, D
WANG, TC
RAZEGHI, M
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (12) : 1745 - 1747
[15] PHOTOLUMINESCENCE STUDY OF GAN
ZHANG, X
KUNG, P
SAXLER, A
WALKER, D
WANG, T
RAZEGHI, H
[J]. ACTA PHYSICA POLONICA A, 1995, 88 (04) : 601 - 606

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