PHOTOLUMINESCENCE STUDY OF GAN

被引:23
作者
ZHANG, X
KUNG, P
SAXLER, A
WALKER, D
WANG, T
RAZEGHI, H
机构
关键词
D O I
10.12693/APhysPolA.88.601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Al2O3 (100), (111)Si, and (00.1)6II-SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant-related emissions from doped samples were observed. Deep-level yellow emission centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with optimum Ga source flow and doped GaN. The experiment data strongly suggest that Ga vacancies are the origin this deep-level emission.
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页码:601 / 606
页数:6
相关论文
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