Void formation and electromigration in sputtered Ag lines with different encapsulations

被引：7

作者：

Hauder, M ^{[1
]}

Gstöttner, J ^{[1
]}

Hansch, W ^{[1
]}

Schmitt-Landsiedel, D ^{[1
]}

机构：

[1] Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2002年 / 99卷 / 1-2期

关键词：

void formation; electromigration; diffusion; Ag lines;

D O I：

10.1016/S0924-4247(01)00912-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diffusion and electromigration behavior was investigated for sputtered Ag lines passivated or encapsulated with different PVD deposited barrier layers of Al-oxide, Si-nitride and Ti. It was found that lateral diffusion can decrease the electromigration lifetime of the Ag lines through an annealing induced void formation in the lines. In contrast to Al-oxide, Ti avoids lateral diffusion and works as an excellent adhesion layer between SiO2 and Ag. Annealing at 573 K improves the lifetime of the Ti encapsulated Ag lines without affecting the barrier stability. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：137 / 143

页数：7

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