Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons

被引:309
作者
Biel, Blanca [1 ,4 ]
Blase, X. [2 ,3 ]
Triozon, Francois [1 ]
Roche, Stephan [4 ]
机构
[1] CEA, LETI, MINATEC, F-38054 Grenoble, France
[2] CNRS, Inst Neel, F-38042 Grenoble 09, France
[3] Univ Grenoble 1, F-38042 Grenoble 09, France
[4] INAC SPSMS GT, Inst Nanosci & Cryogen, CEA, F-38054 Grenoble 9, France
关键词
SCANNING TUNNELING MICROSCOPE; ELECTRONIC-PROPERTIES; CARBON NANOTUBES; DEFECTS;
D O I
10.1103/PhysRevLett.102.096803
中图分类号
O4 [物理学];
学科分类号
070305 [高分子化学与物理];
摘要
We present first-principles calculations of quantum transport in chemically doped graphene nanoribbons with a width of up to 4 nm. The presence of boron and nitrogen impurities is shown to yield resonant backscattering, whose features are strongly dependent on the symmetry and the width of the ribbon, as well as the position of the dopants. Full suppression of backscattering is obtained on the pi-pi(*) plateau when the impurity preserves the mirror symmetry of armchair ribbons. Further, an unusual acceptor-donor transition is observed in zigzag ribbons. These unconventional doping effects could be used to design novel types of switching devices.
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页数:4
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