Attenuated phase shift mask materials for 248 and 193 nm lithography

In order to push resolution toward diffraction limits for 248 and 193 nm lithography, it is likely that some combination of optical enhancement may be needed. The attenuated phase shift mask approach may prove to be one of the less complex techniques available. Four materials are presented which may meet optical and process requirements for use as attenuated phase shift mask films: a molybdenum silicon oxide composite, an aluminum/aluminum nitride cermet, an understoichiometric silicon nitride, and a tantalum silicon oxide composite. All of these materials are shown to be capable of 4%-15% transmission at 193 nm with thicknesses that produce a pi phase shift. Evaluation of addition film properties including plasma reactive ion etch and long wavelength transmission helps in establishing materials which may be most production worthy. (C) 1996 American Vacuum Society.