Fabrication of photonic crystals in silicon-on-insulator using 248-nm deep UV lithography

被引：132

作者：

Bogaerts, W ^{[1
]}

Wiaux, V

Taillaert, D

Beckx, S

Luyssaert, B

Bienstman, P

Baets, R

机构：

[1] State Univ Ghent, IMEC, Dept Informat Technol, INTEC, B-9000 Ghent, Belgium

[2] IMEC, INteruniv Microelect Ctr, Silicon Proc Technol Div, B-3001 Louvain, Belgium

[3] MIT, Cambridge, MA 02139 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 04期

关键词：

integrated optics; lithography; nanotechnology;

D O I：

10.1109/JSTQE.2002.800845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate wavelength-scale photonic nanostructures, including photonic crystals, fabricated in silicon-on-insulator using deep ultraviolet (UV) lithography. We discuss the mass-manufacturing capabilities of deep UV lithography compared to e-beam lithography. This is illustrated with experimental results. Finally, we present some of the issues that arise when trying to use established complementary metal-oxide-semiconductor processes for the fabrication of photonic integrated circuits.

引用

页码：928 / 934

页数：7

共 18 条

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