BURIED-OXIDE SILICON-ON-INSULATOR STRUCTURES .1. OPTICAL WAVE-GUIDE CHARACTERISTICS

被引：29

作者：

EMMONS, RM ^{[1
]}

KURDI, BN ^{[1
]}

HALL, DG ^{[1
]}

机构：

[1] IBM CORP,ALMADEN RES CTR,DIV RES,SAN JOSE,CA 95120

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 01期

关键词：

D O I：

10.1109/3.119510

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Buried-oxide silicon-on-insulator structures are analyzed using both a multilayer transfer matrix approach and a simple approximate method. Results show that these structures can support low-loss leaky modes with substrate leakage losses under 1 dB/cm. Even for a reasonably thick silicon film layer, adjacent modes of the same polarization can have loss discriminations as large as 100 dB/cm. Mode effective indexes obtained from experimental grating transmission measurements taken on waveguides fabricated with the SIMOX process agree with the theoretical analysis.

引用

页码：157 / 163

页数：7

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