Temperature-Dependent Hall and Field-Effect Mobility in Strongly Coupled All-Inorganic Nanocrystal Arrays

被引:75
作者
Jang, Jaeyoung [1 ,2 ]
Liu, Wenyong [1 ,2 ]
Son, Jae Sung [1 ,2 ]
Talapin, Dmitri V. [1 ,2 ,3 ]
机构
[1] Univ Chicago, Dept Chem, Chicago, IL 60637 USA
[2] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA
[3] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
关键词
Hall effect; InAs nanocrystals; inorganic ligands; charge transport; doping electron mobility; carrier trapping; BAND-LIKE TRANSPORT; COLLOIDAL NANOCRYSTALS; QUANTUM DOTS; LOW-VOLTAGE; SEMICONDUCTOR NANOCRYSTALS; CHARGE-TRANSPORT; SOLIDS; ELECTRON; SIZE; TRANSISTORS;
D O I
10.1021/nl403889u
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on the temperature-dependent Hall effect characteristics of nanocrystal (NC) arrays prepared from colloidal InAs NCs capped with metal chalcogenide complex (MCC) ligands (In2Se42- and Cu7S4-). Our study demonstrates that Hall effect measurements are a powerful way of exploring the fundamental properties of NC solids. We found that solution-cast 5.3 nm InAs NC films capped with copper sulfide MCC ligands exhibited high Hall mobility values over 16 cm(2)/(V s). We also showed that the nature of MCC ligands can control doping in NC solids. The comparative study of the temperature-dependent Hall and field-effect mobility values provides valuable insights concerning the charge transport mechanism and points to the transition from a weak to a strong coupling regime in all-inorganic InAs NC solids.
引用
收藏
页码:653 / 662
页数:10
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