Temperature-Dependent Hall and Field-Effect Mobility in Strongly Coupled All-Inorganic Nanocrystal Arrays

被引：76

作者：

Jang, Jaeyoung ^{[1
,2
]}

Liu, Wenyong ^{[1
,2
]}

Son, Jae Sung ^{[1
,2
]}

Talapin, Dmitri V. ^{[1
,2
,3
]}

机构：

[1] Univ Chicago, Dept Chem, Chicago, IL 60637 USA

[2] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA

[3] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

来源：

NANO LETTERS | 2014年 / 14卷 / 02期

关键词：

Hall effect; InAs nanocrystals; inorganic ligands; charge transport; doping electron mobility; carrier trapping; BAND-LIKE TRANSPORT; COLLOIDAL NANOCRYSTALS; QUANTUM DOTS; LOW-VOLTAGE; SEMICONDUCTOR NANOCRYSTALS; CHARGE-TRANSPORT; SOLIDS; ELECTRON; SIZE; TRANSISTORS;

D O I：

10.1021/nl403889u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on the temperature-dependent Hall effect characteristics of nanocrystal (NC) arrays prepared from colloidal InAs NCs capped with metal chalcogenide complex (MCC) ligands (In2Se42- and Cu7S4-). Our study demonstrates that Hall effect measurements are a powerful way of exploring the fundamental properties of NC solids. We found that solution-cast 5.3 nm InAs NC films capped with copper sulfide MCC ligands exhibited high Hall mobility values over 16 cm(2)/(V s). We also showed that the nature of MCC ligands can control doping in NC solids. The comparative study of the temperature-dependent Hall and field-effect mobility values provides valuable insights concerning the charge transport mechanism and points to the transition from a weak to a strong coupling regime in all-inorganic InAs NC solids.

引用

页码：653 / 662

页数：10

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