High-throughput fabrication of anticounterfeiting colloid-based photoluminescent microtags using electrical nanoimprint lithography

被引:22
作者
Diaz, R. [1 ]
Palleau, E. [1 ]
Poirot, D. [1 ,2 ]
Sangeetha, N. M. [1 ]
Ressier, L. [1 ]
机构
[1] Univ Toulouse, INSA CNRS UPS, LPCNO, F-31077 Toulouse, France
[2] Toulouse Tech Transfer, F-31432 Toulouse, France
关键词
nanoimprint lithography; colloid assembly; anti-counterfeiting tags; triboelectrification; nanoxerography; upconverting NaYF4 nanocrystals; NANOPARTICLES; NANOCRYSTALS; STRAIN;
D O I
10.1088/0957-4484/25/34/345302
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This work demonstrates the excellent capability of the recently developed electrical nanoimprint lithography (e-NIL) technique for quick, high-throughput production of well-defined colloid assemblies on surfaces. This is shown by fabricating micron-sized photoluminescent quick response (QR) codes based on the electrostatic directed trapping (so called nanoxerography process) of 28 nm colloidal lanthanide-doped upconverting NaYF4 nanocrystals. Influencing experimental parameters have been optimized and the contribution of triboelectrification in e-NIL was evidenced. Under the chosen conditions, more than 300 000 nanocrystal-based QR codes were fabricated on a 4 inch silicon wafer, in less than 15 min. These microtags were then transferred to transparent flexible films, to be easily integrated onto desired products. Invisible to the naked eye, they can be decoded and authenticated using an optical microscopy image of their specific photoluminescence mapping. Beyond this very promising application for product tracking and the anti-counterfeiting strategies, e-NIL nanoxerography, potentially applicable to any types of charged and/or polarizable colloids and pattern geometries opens up tremendous opportunities for industrial scale production of various other kinds of colloid-based devices and sensors.
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页数:7
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