Effect of biaxial strain on the electrical and magnetic properties of (001) La0.7Sr0.3MnO3 thin films

被引:183
作者
Adamo, C. [1 ]
Ke, X. [2 ,3 ]
Wang, H. Q. [4 ]
Xin, H. L. [4 ]
Heeg, T. [1 ]
Hawley, M. E. [5 ]
Zander, W. [6 ,7 ]
Schubert, J. [6 ,7 ]
Schiffer, P. [2 ,3 ]
Muller, D. A. [4 ]
Maritato, L. [8 ,9 ]
Schlom, D. G. [1 ]
机构
[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
[4] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[5] Los Alamos Natl Lab, Mat Sci & Technol Div MST 8, Los Alamos, NM 87545 USA
[6] Forschungszentrum Julich, Inst Bio & Nanosyst IBN1 IT, D-52425 Julich, Germany
[7] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany
[8] Univ Salerno, Dipartimento Matemat & Informat, I-84081 Baronissi, SA, Italy
[9] CNR INFM Salerno, I-84081 Baronissi, SA, Italy
基金
美国国家科学基金会;
关键词
METAL-INSULATOR-TRANSITION; MOLECULAR-BEAM EPITAXY; MANGANITE FILMS; MAGNETORESISTANCE; TEMPERATURE;
D O I
10.1063/1.3213346
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the effect of biaxial strain on thin films of (001) La0.7Sr0.3MnO3. We deposited films by reactive molecular-beam epitaxy on different single crystalline substrates, varying the substrate-induced biaxial strain from -2.3% to +3.2%. Magnetization and electrical transport measurements reveal that the dependence of the Curie temperature on biaxial strain is in very good agreement with the theoretical predictions of Millis et al. [J. Appl. Phys. 83, 1588 (1998)]. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3213346]
引用
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页数:3
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