Heat transport in masks for deep X-ray lithography during the irradiation process

被引:10
作者
Neumann, M [1 ]
Pantenburg, FJ [1 ]
Rohde, M [1 ]
Sesterhenn, M [1 ]
机构
[1] FORSCHUNGSZENTRUM KARLSRUHE,INST MAT FORSCH 1,D-76021 KARLSRUHE,GERMANY
关键词
D O I
10.1016/S0026-2692(96)00038-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The problem of heat generation and heat transport due to the absorption of the synchrotron beam energy in the X-ray mask and the resist during the lithographic process has been examined. For this purpose a numerical simulation with the finite element method has been performed coupled with experimental measurements of the temperature rise on the mask during the synchrotron irradiation at the electron stretcher accelerator (ELSA) of Bonn University. Our results show that the temperature rise on the mask is localized to the immediate vicinity of the synchrotron beam position with an absolute value of about 12 degrees C while it remains at ambient temperature apart from beam profile. Within the resist the temperature rise is up to 15 degrees C depending on the material and the thickness of the ground plate used. Due to the low thermal conductivity of the resist a temperature gradient exists across its thickness. The influence of the parameters which can affect the amplitude and the distribution of the temperature on the mask and within the resist like the beam current, scanning velocity of the beam, the beam width, the thickness of the resist and the material selection of the ground plate has been studied using the finite element model. The results of this model have been verified experimentally by measurements with a specific mask which has been designed to measure the temperature during the irradiation process. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:349 / 355
页数:7
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