Low-temperature luminescence and energy transfer processes in Eu3+, Nd3+, and Cr-doped sol-gel PLZT ceramics

被引:27
作者
Murakami, S
Herren, M
Rau, D
Sakurai, T
Morita, M [1 ]
机构
[1] Seikei Univ, Dept Ind Chem, Musashino, Tokyo 1808633, Japan
[2] BDS AG, Bern, Switzerland
关键词
sol-gel method; PLZT ceramics; Eu3+; Cr5+; energy transfer;
D O I
10.1016/S0022-2313(99)00101-5
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Luminescence and decay times of sol-gel PLZT(9/65/35) ceramics doped with Eu3+, Nd3+ and chromium ions are investigated to elucidate site occupancy and energy transfer processes at lower temperatures down to 10 K, in comparison with those prepared by mixed-oxide method. Luminescence and excitation energy transfer in sol-gel PLZT: Eu3+, Nd3+ are discussed with regard to trapping-limited energy transfer processes with critical distances of about 0.5 nm. The presence of three A sites in PLZT:Eu3+ under site-selective excitations and two B sites in PLZT : Cr3+, Cr5+ in NIR emission are confirmed at low temperatures. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:215 / 219
页数:5
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