Selective nucleation and growth of carbon nanotubes at the CoSi2/Si interface

被引:9
作者
Biró, LP [1 ]
Molnár, G
Szabó, I
Vértesy, Z
Horváth, ZE
Gyulai, J
Kónya, Z
Piedigrosso, P
Fonseca, A
Nagy, JB
Thiry, PA
机构
[1] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
[2] Fac Univ Notre Dame Paix, B-5000 Namur, Belgium
[3] Attila Jozsef Univ, Dept Appl Chem, H-6720 Szeged, Hungary
关键词
D O I
10.1063/1.125868
中图分类号
O59 [应用物理学];
学科分类号
摘要
A patterned CoSi2/Si substrate was used for the catalytic growth of carbon nanostructures and nanotubes in the temperature range of 750-800 degrees C, using acetylene/N-2 as a reaction mixture flowing through a quartz tube at ambient pressure. Selective nucleation confined to the CoSi2/Si interface region was achieved. Scanning electron microscopy and transmission electron microscopy were used to investigate the grown nanostructures. (C) 2000 American Institute of Physics. [S0003-6951(00)02006-4].
引用
收藏
页码:706 / 708
页数:3
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