Optical properties of titania films prepared by off-plane filtered cathodic vacuum arc

被引:31
作者
Zhao, ZW [1 ]
Tay, BK [1 ]
Lau, SP [1 ]
Yu, GQ [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
关键词
physical vapor deposition processes; oxides; dielectric materials;
D O I
10.1016/j.jcrysgro.2004.04.088
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Amorphous titania thin films were deposited by an off-plane filtered cathodic vacuum arc (FCVA) at a process pressure of 3.0 x 10(-4) Torr at room temperature. Core level of Ti 2p(3/2) (458.3 eV) and O 1 s (529.9 eV) obtained from XPS spectrum and their deviation in binding energy (DeltaBE = 71.6 eV) indicate that only the Ti4+ of Ti oxidation state exists in the film and the film was of ideal stoichiometry. The film exhibits good optical properties, such as high transmittance and optical band gap. Moreover, it possesses bulk-like refractive index (up to 2.57 at 550 nm) and lower extinction coefficient (similar to10(-4) at 550 nm) with smooth surface. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:543 / 546
页数:4
相关论文
共 30 条
[1]   INFLUENCE OF SUBSTRATE ON STRUCTURAL-PROPERTIES OF TIO2 THIN-FILMS OBTAINED VIA MOCVD [J].
BATTISTON, GA ;
GERBASI, R ;
PORCHIA, M ;
MARIGO, A .
THIN SOLID FILMS, 1994, 239 (02) :186-191
[2]   Mechanical properties of SiO2 and Si3N4 coatings:: a BAM/NIST co-operative project [J].
Beck, U ;
Smith, DT ;
Reiners, G ;
Dapkunas, SJ .
THIN SOLID FILMS, 1998, 332 (1-2) :164-171
[3]   Elaboration and characterization of titania coatings [J].
BenAmor, S ;
Baud, G ;
Besse, JP ;
Jacquet, M .
THIN SOLID FILMS, 1997, 293 (1-2) :163-169
[4]   Structural and optical properties of titanium oxide thin films deposited by filtered arc deposition [J].
Bendavid, A ;
Martin, PJ ;
Jamting, Å ;
Takikawa, H .
THIN SOLID FILMS, 1999, 355 :6-11
[5]   Deposition and modification of titanium dioxide thin films by filtered arc deposition [J].
Bendavid, A ;
Martin, PJ ;
Takikawa, H .
THIN SOLID FILMS, 2000, 360 (1-2) :241-249
[6]  
BUTLER MA, 1980, J MATER SCI, V15, P19
[7]   MOSFET transistors fabricated with high permitivity TiO2 dielectrics [J].
Campbell, SA ;
Gilmer, DC ;
Wang, XC ;
Hsieh, MT ;
Kim, HS ;
Gladfelter, WL ;
Yan, JH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (01) :104-109
[8]   PHOTOOXIDATION OF METHANOL USING V2O5/TIO2 AND MOO3/TIO2 SURFACE OXIDE MONOLAYER CATALYSTS [J].
CARLSON, T ;
GRIFFIN, GL .
JOURNAL OF PHYSICAL CHEMISTRY, 1986, 90 (22) :5896-5900
[9]  
GUO X, 1999, INT EL DEV M, P137
[10]  
Huang N, 1994, J Biomater Appl, V8, P404, DOI 10.1177/088532829400800406